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DC PLASMA ANODIZATION OF GAAS.CHESLER LA; ROBINSON GY.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 1; PP. 60-62; BIBL. 10 REF.Article

ECONOMICS OF HIGH GRADIENT MAGNETIC SEPARATION OF CERAMIC MINERALS.ROBINSON GY JR.1978; AMER. CERAM. SOC. BULL.; USA; DA. 1978; VOL. 57; NO 5; PP. 498-502; (3 P.); BIBL. 4 REF.Article

A STUDY OF PD₂SI FILMS ON SILICON USING AUGER ELECTRON SPECTROSCOPY.FERTIG DJ; ROBINSON GY.1976; SOLID. STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 5; PP. 407-413; BIBL. 17 REF.Article

AU/BE OHMIC CONTACTS TO P-TYPE INDIUM PHOSPHIDEVALOIS AJ; ROBINSON GY.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 10; PP. 973-977; BIBL. 11 REF.Article

A COMPARISON OF PD SCHOTTKY CONTACTS ON INP, GAAS AND SIHOEKELEK E; ROBINSON GY.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 2; PP. 99-103; BIBL. 13 REF.Article

AUGER ELECTRON SPECTROSCOPY AND SPUTTER ETCHING NI/AU-GE OU N-GAASROBINSON GY; JARVIS NL.1972; APPL. PHYS. LETTERS; U.S.A.; DA. 1972; VOL. 21; NO 10; PP. 507-510; BIBL. 10 REF.Serial Issue

COMPOSITE OXIDE FILMS FORMED BY DE PLASMA ANODIZATION OF AL/GAASPU NF; ROBINSON GY.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 53; NO 1; PP. 416-420; BIBL. 17 REF.Article

PD/GE CONTACTS TO N-TYPE GAASGRINOLDS HR; ROBINSON GY.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 9; PP. 973-985; BIBL. 45 REF.Article

SCHOTTKY CONTACTS ON CHEMICALLY ETCHED P- AND N-TYPE INDIUM PHOSPHIDEHOEKELEK E; ROBINSON GY.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 5; PP. 426-428; BIBL. 21 REF.Article

THE EFFECT OF DIELECTRIC SURFACE LOADING ON THE STABILITY OF EPITAXIAL COPLANAR GUNN DIODES.ANDERSON SJ; ROBINSON GY.1974; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 6; PP. 377-378; BIBL. 7 REF.Article